BS IEC 60747-9:2019 BSl Standards Publication Semiconductor devices Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs) bsi. BSIEC 60747-9:2019 BRITISH STANDARD National foreword This British Standard is the UK implementation of IEC 60747-9:2019. It supersedes BS IEC 60747-9:2007, which is withdrawn. The UK participation in its preparation was entrusted to Technical Committee EPL/47, Semiconductors. A list of organizations represented on this committee can be obtained on request to its secretary. This publication does not purport to include all the necessary provisions of a contract. Users are responsible for its correct application. @ The British Standards Institution 2019 Published by BSI Standards Limited 2019 ISBN 9780 58094714 8 ICS31.080.01; 31.080.30 Compliance with a British Standard cannot confer immunity from legal obligations. This British Standard was published under the authority of the Standards Policy and Strategy Committee on 30 November 2019. Amendments/corrigenda issued since publication Date Textaffected BSIEC 60747-9:2019 IEC IEC 60747-9 Edition 3.0 2019-11 INTERNATIONAL STANDARD NORME INTERNATIONALE Semiconductor devices - Part 9: Discrete devices - Insulated-gate bipolar transistors (IGBTs) Dispositifs a semiconducteurs- Partie 9: Dispositifs discrets - Transistors bipolaires a grille isolee (IGBT) INTERNATIONAL ELECTROTECHNICAL COMMISSION COMMISSION ELECTROTECHNIQUE INTERNATIONALE ICS 31.080.01; 31.080.30 ISBN 978-2-8322-7530-6 Warning! Make sure that you obtained this publication from an authorized distributor. Attention! Veuillez vous assurer que vous avez obtenu cette publication via un distributeur agree.