论文标题
硅掺杂的$β$ -GA $ _2 $ o $ $ _3 $胶片以1 $μ$ m/h的生长，suboxide Molecular beam Esperatagy
Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy
论文作者
论文摘要
我们报告使用亚氧化物分子束外观（S-MBE）以$β$ -GA $ -GA $ _2 $ o $ $ _3 $的增长，增长率为〜1 $ m $ m/h，并控制硅掺杂浓度从5x10 $^{16} $^{16} $ to 10 $^{19} $^{19} $ cm $ cm $ cm $^$^3} {-3} {-3} {-3} {-3} {-3} $^{16} $^{16} $。在S-MBE中，提供了99.98 \％ga $ _2 $ o，即甘油氧化剂的分子束的形式的预氧化凝胶。直接向生长表面提供GA2O，绕过了与常规MBE的$β$ -GA $ _2 $ o $ _3 $涉及的两步反应机制的限速第一步。结果，在相对较低的生长温度（t $ _ {sub} $ = 525 $^\ circ $ c）下，很容易实现〜1 $ m $ m/h的增长率，从而导致结构完美且光滑的薄膜（RMS粗糙度<2 nm <2 nm on 〜1 $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m $ m）。含硅氧化物来源（SIO和SIO $ _2 $）产生SIO亚氧化物分子束来涂抹$β$ -GA -GA $ _2 $ _2 $ o $ $ _3 $ layers。 Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ S $^{ - 1} $ 76 K;发现硅掺杂剂的活化能为27 meV。我们还展示了这些硅掺杂的$β$ -GA $ _2 $ o $ $ _3 $ y胶片由S-MBE生长的胶片，增长率约为1 $μ$ m/h，制成。
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h.
