论文标题

Moiré石墨烯中量子异常效应的晶格模型

Lattice Model For The Quantum Anomalous Hall Effect in Moiré Graphene

论文作者

Khalifa, Ahmed, Murthy, Ganpathy, Kaul, Ribhu K.

论文摘要

受到魔术角扭曲双层石墨烯的实验的启发,我们在莫伊尔环境中提出了量子异常效应的晶格平均场模型。因此,我们的跳跃模型为MoiréChern绝缘子提供了一个简单的途径,以相称的扭曲模型。我们在带状的几何形状中介绍了我们的模型的研究,在其中,我们证明了具有横向定位的厚性手性边缘状态,该状态与Moiré晶格间距相比。我们还研究了相反的奇特绝缘子之间的域壁的电子结构。我们的模型和结果与将成像或操纵Moiré量子异常的霍尔边缘状态的实验有关。

Inspired by experiments on magic angle twisted bilayer graphene, we present a lattice mean-field model for the quantum anomalous Hall effect in a moiré setting. Our hopping model thus provides a simple route to a moiré Chern insulator in commensurately twisted models. We present a study of our model in the ribbon geometry, in which we demonstrate the presence of thick chiral edge states that have a transverse localization that scales with the moiré lattice spacing. We also study the electronic structure of a domain wall between opposite Chern insulators. Our model and results are relevant to experiments that will image or manipulate the moiré quantum anomalous Hall edge states.

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