论文标题
纳米晶的记忆和逻辑家族
A Nanocryotron Memory and Logic Family
论文作者
论文摘要
迄今为止，基于纳米晶体的超导电子产品的发展已限制在很少的设备电路上，部分原因是缺乏标准和健壮的逻辑细胞。在这里，我们介绍并实验展示了一组基于纳米晶的构件的设计，这些块可以配置和组合以实现内存和逻辑功能。设备是通过对硝化氮化物的单个超导层进行图案制造的，并在液态氦气中测量的各种操作点。测试显示$ 10^{ - 4} $比特错误率以上$ 20 \，\％$ $ 50 \，$ MHz，以及在垂直$ 36 \，$ MT磁场的效果下运行的可能性，$ 30 \，$ 30 \，\％$ $ 10 \％$ 10 \，$ MHz。此外，我们设计并测量了由两个记忆单元制成的等效延迟触发器，以显示组合多个构件以制造更大电路的可能性。这些块可能构成了纳米晶逻辑电路和有限状态机的开发的坚实基础，并具有潜在的应用在超导纳米型单光子探测器的集成处理和控制中。
The development of superconducting electronics based on nanocryotrons has been limited so far to few-device circuits, in part due to the lack of standard and robust logic cells. Here, we introduce and experimentally demonstrate designs for a set of nanocryotron-based building blocks that can be configured and combined to implement memory and logic functions. The devices were fabricated by patterning a single superconducting layer of niobium nitride and measured in liquid helium on a wide range of operating points. The tests show $10^{-4}$ bit error rates with above $20\,\%$ margins up to $50\,$MHz and the possibility of operating under the effect of a perpendicular $36\,$mT magnetic field, with $30\,\%$ margins at $10\,$MHz. Additionally, we designed and measured an equivalent delay flip-flop made of two memory cells to show the possibility of combining multiple building blocks to make larger circuits. These blocks may constitute a solid foundation for the development of nanocryotron logic circuits and finite-state machines with potential applications in the integrated processing and control of superconducting nanowire single-photon detectors.
