论文标题
测量非理想P-N二极管中碳纳米管网络的电子带隙
Measuring the Electronic Bandgap of Carbon Nanotube Networks in Non-ideal p-n Diodes
论文作者
论文摘要
由于其尺寸，因此在准二维材料（例如碳纳米管）（例如碳纳米管）中的带隙的测量很具有挑战性。在这项工作中，我们使用非理想的P-N二极管测量了聚合物包裹的半导体单壁碳纳米管（S-SWCNT）网络的电子带隙。使用这些二极管，我们测量具有不同直径的不同聚合物包裹的S-SWCNT的电子带隙和激子水平：ARC放电（〜1.55nm），（7,5）（0.83nm）（0.83nm）和（6,5）和（6,5）（0.76nm）。我们的价值与理论预测一致，从而洞悉了S-SWCNT网络的基本属性。
The measurement of the bandgap in quasi-one dimensional materials such as carbon nanotubes is challenging due to its dimensionality. In this work, we measure the electronic bandgap of networks of polymer-wrapped semiconducting single-walled carbon nanotubes (s-SWCNTs) using non-ideal p-n diodes. Using these diodes, we measure the electronic bandgap and excitonic levels of different polymer-wrapped s-SWCNTs with varying diameters: arc discharge (~1.55nm), (7,5) (0.83nm), and (6,5) (0.76nm). Our values are consistent with theoretical predictions, providing insight into the fundamental properties of networks of s-SWCNTs.
