论文标题
温度和激发能量对散装HFS $ _2 $中拉曼散射的影响
The effect of temperature and excitation energy on Raman scattering in bulk HfS$_2$
论文作者
论文摘要
散装Hafnium二硫化物（HFS $ _2 $）中的拉曼散射（RS）作为温度（5 K $ -350 K）的函数，并具有极化分辨率和几种激光能量的激发。观察到，观察到低敏感性限制的BlueShift，以温度诱导的BlueShift，观察到了主要的拉曼活性（$ _ {\ textrm {1G}} $和E $ _ {\ textrm {g}} $的意外温度依赖性。模式的低温淬火$ω_1$（134 cm $^{ - 1} $）和大约在新模式的出现。报告了184 cm $^{ - 1} $，标记为Z。还报道了HFS $ _2 $中RS的光学各向异性，这非常容易受到激发能量。 A $ _ {\ textrm {1g}} $模式的明显淬灭，$ t $ = 5 k和e $ _ {\ textrm {g}} $模式在$ t $ = 300 k的rs Spectrum激发率激励的RS Spectrum Int $ t $ = 300 k时也被观察。我们在轻相互作用的可能共振特征的背景下讨论结果。分析也是在相邻HFS $ _2 $层之间在范德华差距中插入的碘分子的可能作用，这不可避免地是由于生长过程而产生的。
Raman scattering (RS) in bulk hafnium disulfide (HfS$_2$) is investigated as a function of temperature (5 K $-$ 350 K) with polarization resolution and excitation of several laser energies. An unexpected temperature dependence of the energies of the main Raman-active (A$_{\textrm{1g}}$ and E$_{\textrm{g}}$) modes with the temperature-induced blueshift in the low-temperature limit is observed. The low-temperature quenching of a mode $ω_1$ (134 cm$^{-1}$) and the emergence of a new mode at approx. 184 cm$^{-1}$, labeled Z, is reported. The optical anisotropy of the RS in HfS$_2$ is also reported, which is highly susceptible to the excitation energy. The apparent quenching of the A$_{\textrm{1g}}$ mode at $T$=5 K and of the E$_{\textrm{g}}$ mode at $T$=300 K in the RS spectrum excited with 3.06~eV excitation is also observed. We discuss the results in the context of possible resonant character of light-phonon interactions. Analyzed is also a possible effect of the iodine molecules intercalated in the van der Waals gaps between neighboring HfS$_2$ layers, which inevitably result from the growth procedure.
