论文标题
3D和2D迦太剂钙钛矿的高温平衡
High temperature equilibrium of 3D and 2D chalcogenide perovskites
论文作者
论文摘要
甲状腺素钙钛矿最近在研究人员聚焦下,是用于光伏应用的新型吸收材料。 BAZRS $ _3 $是该家族中调查最多的化合物,显示出高吸收系数,带镜头约为1.8 eV,以及出色的环境和热稳定性。除了3D Perovskite Bazrs $ _3 $外,BA-ZR-S组成空间还包含各种2-D Ruddlesden-Popper阶段Ba $ _ {X+1} $ Zr $ _x $ _x $ _x $ _ s $ _ {3x+1} $(最近报告了$ x = $ 1,2,2,2,2)。在这项工作中,将表明,在高温下,吉布斯(Gibbs)的3D和2D钙钛矿的自由能非常接近,这表明2D相很容易在高温下形成。在不同的化学计量条件下,对BAS和ZRS $ _2 $固态反应的产品的分析呈现了BAZRS $ _3 $和BA $ _4 $ _4 $ ZR $ _3 $ _3 $ S $ _ {10} $的混合物。为了仔细解析组成,XRD,SEM和EDS分析与拉曼光谱法相辅相成。为此,计算了针对3D和2D辣椒剂钙钛矿以及二进制前体计算的声子模式和随之而来的拉曼光谱。这种彻底的表征表明,通过固态合成形成相纯硫化葡萄球菌的热力学局限性和实验困难,以及使用多种技术可以很好地解析这些辣椒剂材料的组成的重要性。
Chalcogenide perovskites have been recently under the researchers spotlight as novel absorber materials for photovoltaic applications. BaZrS$_3$, the most investigated compound of this family, shows a high absorption coefficient, a bandgap of around 1.8 eV, and excellent environmental and thermal stability. In addition to the 3D perovskite BaZrS$_3$, the Ba-Zr-S compositional space contains various 2-D Ruddlesden-Popper phases Ba$_{x+1}$Zr$_x$S$_{3x+1}$ (with $x=$ 1, 2, 3) which have recently been reported. In this work it will be shown that at high temperature the Gibbs free energies of 3D and 2D perovskites are very close, suggesting that 2D phases can be easily formed at high temperatures. The analysis of the product of the BaS and ZrS$_2$ solid-state reaction, in different stoichiometric conditions, present a mixture of BaZrS$_3$ and Ba$_4$Zr$_3$S$_{10}$. To carefully resolve the composition, XRD, SEM and EDS analysis were complemented with Raman spectroscopy. For this purpose, the phonon modes, and the consequent Raman spectra, were calculated for the 3D and 2D chalcogenide perovskites, as well as for the binary precursors. This thorough characterization demonstrates the thermodynamic limitations and experimental difficulties in forming phase-pure chalcogenide perovskites through solid state synthesis, and the importance of using multiple techniques to soundly resolve the composition of these chalcogenide materials.