论文标题

在固定拐点处激光

Lasing at a Stationary Inflection Point

论文作者

Herrero-Parareda, Albert, Furman, Nathaniel, Mealy, Tarek, Gibson, Richard, Bedford, Robert, Vitebskiy, Ilya, Capolino, Filippo

论文摘要

先进的是,基于三阶特殊点(EPD)的活性周期光学波导中基于冷冻模式的激光概念。在无损和无增益的波导中的冷冻模式与Bloch分散关系中的固定拐点(SIP)相关,其中三个Bloch Eigenmodes CociCe形成了冷冻模式。实际上,我们考虑了不对称的蛇形光学波导(ASOW)。在SIP频率附近运行的ASOW显示非谐振性质的大组延迟,该性质缩放为波导长度的立方体,当包括活性材料时,会导致强大的增益增强。因此,在sip的近距离运行的激光具有增益阈值,该阈值缩放为波导长度的负数。我们确定这种缩放定律是在存在小的分布损失的情况下保持的,例如与波导弯曲和粗糙度相关的辐射。此外,我们表明,尽管增益会导致在SIP聚集的模式下的失真,但冷冻模式的性质对如此小的扰动具有相对抵抗力,并且我们仍然观察到很大程度的异常退化,即增益值,使系统的阈值超过阈值。最后,我们的研究还表明,在SIP附近的激光比在近距离近距离接近的光子带边缘附近的激光偏爱。特别是,我们观察到,与光子常规带边缘(RBE)相比,ASOW中SIP诱导的激光显示出较低的增益阈值,即使SIP共振的质量低于RBE共振。

The concept of lasers based on the frozen mode regime in active periodic optical waveguides with a 3rd-order exceptional point of degeneracy (EPD) is advanced. The frozen mode regime in a lossless and gainless waveguide is associated with a stationary inflection point (SIP) in the Bloch dispersion relation, where three Bloch eigenmodes coalesce forming the frozen mode. As a practical example, we consider an asymmetric serpentine optical waveguide (ASOW). An ASOW operating near the SIP frequency displays a large group delay of a non-resonant nature that scales as the cube of the waveguide length, leading to a strong gain enhancement when active material is included. Therefore, a laser operating in the close vicinity of an SIP has a gain threshold that scales as a negative cube of the waveguide length. We determine that this scaling law is maintained in the presence of small distributed losses, such as radiation associated with waveguide bends and roughness. In addition, we show that although gain causes a distortion in the modes coalescing at the SIP, the properties of the frozen mode are relatively resistant to such small perturbations and we still observe a large degree of exceptional degeneracy for gain values that bring the system above threshold. Finally, our study also reveals that lasing near an SIP is favored over lasing near a photonic band edge located in close proximity to the SIP. In particular, we observe that an SIP-induced lasing in an ASOW displays lower gain threshold compared to lasing near the photonic regular band edge (RBE), even though the SIP resonance has a lower quality factor than the RBE resonance.

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