论文标题

与MOS2纳米甲和纳米管量子点的非破坏性低温接触

Non-Destructive Low-Temperature Contacts to MoS2 Nanoribbon and Nanotube Quantum Dots

论文作者

Schock, R. T. K., Neuwald, J., Möckel, W., Kronseder, M., Pirker, L., Remškar, M., Hüttel, A. K.

论文摘要

二硫化钼纳米纤维和纳米管是具有较强的自旋轨道相互作用的准1D半导体,这是一种对量子电子应用的纳米材料高度有希望的。在这里,可以证明接触金属和该纳米材料之间的二晶半数层强烈改善了接触的特性。在室温下观察到100K $ω$的两点电阻。在低温温度下,可见库仑封锁。与以前使用低工作功能金属作为触点的设备相比,所得的稳定性图表明在触点和相应障碍处明显没有陷阱状态。在100MK以下的温度下观察到单层量子运输。

Molybdenum disulfide nanoribbons and nanotubes are quasi-1D semiconductors with strong spin-orbit interaction, a nanomaterial highly promising for quantum electronic applications. Here, it is demonstrated that a bismuth semimetal layer between the contact metal and this nanomaterial strongly improves the properties of the contacts. Two-point resistances on the order of 100k$Ω$ are observed at room temperature. At cryogenic temperature, Coulomb blockade is visible. The resulting stability diagrams indicate a marked absence of trap states at the contacts and the corresponding disorder, compared to previous devices that use low-work-function metals as contacts. Single-level quantum transport is observed at temperatures below 100mK.

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