论文标题
关于抗铁磁旋转的观点
Perspectives on Antiferromagnetic Spintronics
论文作者
论文摘要
尽管使用铁磁材料在过去的十年中，Spintronic设备的开发已经显着发展，但这些设备的广泛实施受到这些材料的显着缺陷的限制。抗铁磁体声称可以解决许多此类缺点，从而导致更快，更小，更节能和更强大的电子产品。抗铁磁铁表现出许多理想的特性，包括零净磁化，对外部磁场的不透水，内在的高频动力学，具有特征性的预衰局频率在Terahertz（THZ）（THZ）上，以及在基于多种磁层（MR）的设备中充当被动交换偏置材料的能力。在这篇观点文章中，我们将讨论抗铁磁体中磁性结构的基本物理，及其与旋转电流，电压和镁质等外部刺激的相互作用。还提供了有关前面挑战的讨论，以及这些系统的未来研究方向的前景。
Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these materials. Antiferromagnets claim to resolve many of these shortcomings leading to faster, smaller, more energy-efficient, and more robust electronics. Antiferromagnets exhibit many desirable properties including zero net magnetization, imperviousness to external magnetic fields, intrinsic high-frequency dynamics with a characteristic precession frequency on the order of terahertz (THz), and the ability to serve as passive exchange-bias materials in multiple magnetoresistance (MR)- based devices. In this Perspective article, we will discuss the fundamental physics of magnetic structures in antiferromagnets and their interactions with external stimuli such as spin current, voltage, and magnons. A discussion on the challenges lying ahead is also provided along with an outlook of future research directions of these systems.
