论文标题
si-mos量子点中的flopping模式自旋量子
Flopping-mode spin qubit in a Si-MOS quantum dot
论文作者
论文摘要
基于硅金属氧化物半导体（SI-MOS）量子点（QD）是大型量子计算机的有前途的平台。为了控制QD中的自旋Qub，近年来最常用的电偶极自旋共振（EDSR）。通过在双量子点电荷状态下将电子定位，在Si/Sige QD中已经实现了Flopping模式EDSR。在这里，我们通过Elzerman Single-shot读数在Si-Mos QD中演示了一个flopping模式的自旋量子。在使用固定驱动能力更改失谐时，我们达到了S形旋转谐振频率，旋转兔频率的数量级改善，并且几乎持续不断的自旋倾向时间。我们的结果为SI-MOS QD中具有较高控制保真度的大规模旋转量子系统提供了一条途径。
Spin qubits based on silicon metal-oxide semiconductor (Si-MOS) quantum dots (QDs) are promising platforms for large-scale quantum computers. To control spin qubits in QDs, electric dipole spin resonance (EDSR) has been most commonly used in recent years. By delocalizing an electron across a double quantum dots charge state, flopping-mode EDSR has been realized in Si/SiGe QDs. Here, we demonstrate a flopping-mode spin qubit in a Si-MOS QD via Elzerman single-shot readout. When changing the detuning with a fixed drive power, we achieve s-shape spin resonance frequencies, an order of magnitude improvement in the spin Rabi frequencies, and virtually constant spin dephasing times. Our results offer a route to large-scale spin qubit systems with higher control fidelity in Si-MOS QDs.
