论文标题
对石墨烯/N-SI Schottky连接太阳能电池的热退火影响：去除PMMA残基
Thermal annealing effects on Graphene/n-Si Schottky junction Solar cell: Removal of PMMA residues
论文作者
论文摘要
热退火是提高石墨烯/N-Si Schottky连接太阳能电池效率的最有效方法之一。在这里，使用J-V特征，瞬态光电流和光电压测量值，通过比较研究研究了其潜在机制。实验结果表明，有一些陷阱状态起源于PMMA残基，并随着入射光强度的增加而导致大型光电流泄漏。还发现，PMMA残基会加速恶化，并迅速使孔掺杂作用无效。通过热退火处理有效去除了这种不良的PMMA残基，以减少光电流泄漏并提高稳定性。
Thermal annealing is one of most effective way to improve the efficiency of graphene/n-Si Schottky junction solar cell. Here, its underlying mechanism has been investigated by comparative studies in terms of the removal of polymethyl methacrylate (PMMA) residues, using the J-V characteristics, the transient photocurrent and photovoltage measurements. Experimental results have revealed that there are trap states which are originated from the PMMA residues and cause the large photocurrent leakage as the intensity of the incident light increases. It is also found that the PMMA residues accelerate deterioration and rapidly invalidate hole doping effects. Such undesirable PMMA residues were effectively removed by the thermal annealing treatments, serving to reduce the photocurrent leakage and to increase the stability.
