论文标题
在拓扑结晶步骤边缘的1D平面带中的相互作用效果
Interaction effects in a 1D flat band at a topological crystalline step edge
论文作者
论文摘要
拓扑晶体绝缘子的步骤边缘可以看作是高阶拓扑的前身，因为它们体现了嵌入在有效的三维电子真空中，从拓扑结晶绝缘子发出的有效的三维电子真空中。使用扫描隧道显微镜和光谱学，我们研究了pb $ _ {1-x} $ sn $ _ {x} $ se在掺杂下的Edge通道的行为。一旦将阶梯边缘的能量位置带到费米水平附近，我们就会观察到相关间隙的开口。实验结果是根据相互作用效应而合理化的，因为电子密度折叠到一维通道，这些效应得到了增强。这构成了一个独特的系统，用于研究拓扑和多体电子效应如何通过Hartree-fock分析对其进行建模。
Step edges of topological crystalline insulators can be viewed as predecessors of higher-order topology, as they embody one-dimensional edge channels embedded in an effective three-dimensional electronic vacuum emanating from the topological crystalline insulator. Using scanning tunneling microscopy and spectroscopy we investigate the behaviour of such edge channels in Pb$_{1-x}$Sn$_{x}$Se under doping. Once the energy position of the step edge is brought close to the Fermi level, we observe the opening of a correlation gap. The experimental results are rationalized in terms of interaction effects which are enhanced since the electronic density is collapsed to a one-dimensional channel. This constitutes a unique system to study how topology and many-body electronic effects intertwine, which we model theoretically through a Hartree-Fock analysis.
