论文标题
整数和分数量子大厅效应的滴模型
A drop model of integer and fractional quantum Hall effects
论文作者
论文摘要
我们提出了一个用于整数和分数量子霍尔效应（FQHE）的滴模型。我们表明，二维电子气体分解为磁盘几何形状中的填充因子ν= 1和ν= 0的区域，并且可以用有限数量的电子形成滴的滴。填充分数的序列是根据实验数据构建的。对于所有序列，都有初始的FQHE状态，与五个电子的滴相对应。其余的FQHE状态是具有五个电子和一对电子对的滴剂的复合状态。
We present a drop model for integer and fractional quantum Hall effects (FQHE). We show that the two-dimensional electron gas breaks up into regions with filling factors ν = 1 and ν = 0 in disk geometry, and the formation of drops with a finite number of electrons is possible. Sequences of filling fractions are constructed on the basis of experimental data. For all sequences there are initial FQHE states, which correspond to a drop with five electrons. The remaining FQHE states are composite states of a drop with five electrons and one or more pairs of electrons.
