论文标题
硅的电离效率从$ \ sim 50 $ ev到$ 3 $ MEV
Ionization efficiency for nuclear recoils in silicon from $\sim 50$ eV to $3$ MeV
论文作者
论文摘要
我们基于Lindhard理论的扩展，为硅核后坐力电离效率提供了一个模型，该理论的扩展是原子键的破坏是根据初始离子能，原子间电位和平均离子离子生产能建模的。还考虑了比Lindhard所假设的更好地描述电子停止，电子散布的影响以及离子的电荷筛选和库仑排斥效应。该模型描述了核后坐力能量中近四个数量级的可用数据。
We present a model for the nuclear recoil ionization efficiency in silicon based on an extension of Lindhard's theory where atomic bond disruption is modeled as a function of the initial ion energy, the interatomic potential, and the average ion-vacancy production energy. A better description of the electronic stopping than the one assumed by Lindhard, the effect of electronic straggling, as well as charge screening and Coulomb repulsion effects of ions are also considered. The model describes the available data over nearly four orders of magnitude in nuclear recoil energy.
