论文标题
A 0.6V $ - $ 1.8V紧凑的温度传感器,分辨率为0.24°C,$ \ pm $ 1.4°C不准确和每次转换1.06nj
A 0.6V$-$1.8V Compact Temperature Sensor with 0.24°C Resolution, $\pm$1.4°C Inaccuracy and 1.06nJ per Conversion
论文作者
论文摘要
本文提出了一个完全集成的CMOS温度传感器,用于在芯片支持动态电压和频率缩放的系统中,用于密集分布的热监测。传感器前端利用基于阈值的基于PMOS的电路将局部温度转换为两个有偏见的电流。然后使用这些来定义两个振荡频率,它们的比率与绝对温度成正比。最后,传感器后端将这种频率比转化为数字温度代码。由于其低复杂性体系结构,该设计的设计达到了非常紧凑的足迹,并且在宽温度范围内具有低功率消耗和高精度。此外,由于简单的嵌入线调节机制,我们的传感器支持电压量表性。该设计是在180nm CMOS技术中进行的,其温度检测范围为0°C $ -100°C $ 100°C,供应电压操作范围从0.6V到1.8V,并且仅为0.021 $ mm^2 $。在20个测试芯片上进行的实验测量结果显示出非常有竞争力的功绩数字,包括分辨率为0.24°C,$ \ pm $ 1.4°C的不准确率,约1.5kHz的采样率和30°C时1.06nJ的每次转换能量。
This paper presents a fully-integrated CMOS temperature sensor for densely-distributed thermal monitoring in systems on chip supporting dynamic voltage and frequency scaling. The sensor front-end exploits a sub-threshold PMOS-based circuit to convert the local temperature into two biasing currents. These are then used to define two oscillation frequencies, whose ratio is proportional to absolute-temperature. Finally, the sensor back-end translates such frequency ratio into the digital temperature code. Thanks to its low-complexity architecture, the proposed design achieves a very compact footprint along with low-power consumption and high accuracy in a wide temperature range. Moreover, thanks to a simple embedded line regulation mechanism, our sensor supports voltage-scalability. The design was prototyped in a 180nm CMOS technology with a 0°C $-$ 100°C temperature detection range, a very wide supply voltage operating range from 0.6V up to 1.8V and very small silicon area occupation of just 0.021$mm^2$. Experimental measurements performed on 20 test chips have shown very competitive figures of merit, including a resolution of 0.24°C, an inaccuracy of $\pm$1.4°C, a sampling rate of about 1.5kHz and an energy per conversion of 1.06nJ at 30°C.