论文标题
BN薄膜的特性和设备性能通过脉冲激光沉积在GAN上生长的薄膜
Properties and device performance of BN thin films grown on GaN by pulsed laser deposition
论文作者
论文摘要
宽大和超级带gap的半导体位于下一代高功率高频电子设备的核心。在这里，我们报告了通过脉冲激光沉积在宽带带氮化壳（GAN）上的超伴侣氮化硼（BN）薄膜的生长。综合光谱（核心水平和价带XP，FTIR，拉曼）和显微镜（AFM和STEM）的特征证实了BN薄膜在GAN上的生长。从光学上讲，我们观察到BN/GAN异质结构是第二次谐波的活跃。此外，与GAN（168 V）相比，我们制造了基于BN/GAN异质结构的Schottky二极管，该二极管表现出了整流的特性，较低的交通电压和提高的击穿能力（234 V），这是由于BN的击穿电场较高。我们的方法是弥合宽阔和超级带式材料之间差距的早期一步，以进行潜在的光电子和下一代高功率电子设备。
Wide and ultrawide-bandgap semiconductors lie at the heart of next-generation high-power, high-frequency electronics. Here, we report the growth of ultrawide-bandgap boron nitride (BN) thin films on wide-bandgap gallium nitride (GaN) by pulsed laser deposition. Comprehensive spectroscopic (core level and valence band XPS, FTIR, Raman) and microscopic (AFM and STEM) characterizations confirm the growth of BN thin films on GaN. Optically, we observed that BN/GaN heterostructure is second-harmonic generation active. Moreover, we fabricated the BN/GaN heterostructure-based Schottky diode that demonstrates rectifying characteristics, lower turn-on voltage, and an improved breakdown capability (234 V) as compared to GaN (168 V), owing to the higher breakdown electrical field of BN. Our approach is an early step towards bridging the gap between wide and ultrawide-bandgap materials for potential optoelectronics as well as next-generation high-power electronics.
