论文标题
LGAD增益层的补偿设计
A Compensated Design of the LGAD Gain Layer
论文作者
论文摘要
在这项贡献中，我们提出了低增益雪崩二极管（LGAD）增益层的创新设计，该二极管层是负责局部和受控信号乘法的P $^+$植入物。在标准LGAD设计中，增益层是通过植入$ \ sim $ 5E16/cm $^3 $原子的受体材料（通常是硼或凝胶）在n $^{++} $ electrode的区域中获得的。在我们的设计中，我们旨在设计由P $^+$和N $^+$植入物的重叠产生的增益层：受体和供体掺杂之间的差异将导致有效浓度约为5E16/cm $^3 $，类似于标准LGADS。目前，辐射下的LGAD传感器的增益机理保持至最高$ \ sim $ 1-2e15/cm $^2 $，然后由于受体去除机制而丢失。新设计将对辐射更具弹性，因为受体原子和供体原子都会在照射下被去除，但是它们的差异将保持恒定。补偿设计将增强LGAD传感器的典型4D跟踪能力，远高于1e16/cm $^2 $。
In this contribution, we present an innovative design of the Low-Gain Avalanche Diode (LGAD) gain layer, the p$^+$ implant responsible for the local and controlled signal multiplication. In the standard LGAD design, the gain layer is obtained by implanting $\sim$ 5E16/cm$^3$ atoms of an acceptor material, typically Boron or Gallium, in the region below the n$^{++}$ electrode. In our design, we aim at designing a gain layer resulting from the overlap of a p$^+$ and an n$^+$ implants: the difference between acceptor and donor doping will result in an effective concentration of about 5E16/cm$^3$, similar to standard LGADs. At present, the gain mechanism of LGAD sensors under irradiation is maintained up to a fluence of $\sim$ 1-2E15/cm$^2$, and then it is lost due to the acceptor removal mechanism. The new design will be more resilient to radiation, as both acceptor and donor atoms will undergo removal with irradiation, but their difference will maintain constant. The compensated design will empower the 4D tracking ability typical of the LGAD sensors well above 1E16/cm$^2$.
