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Among the various kinds of spin defects in hBN, the negatively charged boron vacancy ($\rm V_B^-$) spin defect that can be deterministically generated is undoubtedly a potential candidate for quantum sensing, but its low quantum efficiency restricts its %use in practical applications. Here, we demonstrate a robust enhancement structure with advantages including easy on-chip integration, convenient processing, low cost and suitable broad-spectrum enhancement for $\rm V_B^-$ defects. %Improved photoluminescence (PL) intensity and optically detected magnetic resonance (ODMR) contrast of $\rm V_B^-$ defect arrays. In the experiment, we used a metal reflective layer under the hBN flakes, filled with a transition dielectric layer in the middle, and adjusted the thickness of the dielectric layer to achieve the best coupling between the reflective dielectric cavity and the hBN spin defect. Using a reflective dielectric cavity, we achieved a PL enhancement of approximately 7-fold, and the corresponding ODMR contrast achieved 18\%. Additionally, the oxide layer of the reflective dielectric cavity can be used as an integrated material for micro-nano photonic devices for secondary processing, which means that it can be combined with other enhancement structures to achieve stronger enhancement. This work has guiding significance for realizing the on-chip integration of spin defects in two-dimensional materials.