论文标题
硅从带绝缘子到金属的二阶相变，该金属由强磁场诱导
Second-order phase transition of silicon from a band insulator to metal induced by strong magnetic fields
论文作者
论文摘要
我们介绍了从带绝缘子到金属的二阶相变，该过渡是由强磁场引起的。浸入磁场中的磁化强度和能带间隙的磁场依赖性通过非侵入性磁场相对论的紧密结合近似方法[Phys [Phys。 Rev. B 97，195135（2018）]。结果表明，能量带隙在2.22x $ 10^4 $（t）的临界磁场上消失。在临界磁场上，磁化强度的磁场依赖性表现出扭结行为，这意味着该现象是从带绝缘子到金属的二阶相变。发现在临界磁场上方的强磁场中，即在金属相中，出现了磁化的振荡。结果表明，这种磁性振荡来自磁性布里渊区中的能带，这些能带从被占用状态变为无占用状态或vasa vasa。
We present the second-order phase transition from a band insulator to metal that is induced by a strong magnetic field. The magnetic-field dependences of the magnetization and energy band gap of a crystalline silicon immersed in a magnetic field are investigated by means of the nonperturbative magnetic-field-containing relativistic tight-binding approximation method [Phys. Rev. B 97, 195135 (2018)]. It is shown that the energy band gap disappears at the critical magnetic field of 2.22x$10^4$ (T). At the critical magnetic field, the magnetic-field dependence of the magnetization exhibits a kink behavior, which means that this phenomenon is the second-order phase transition from a band insulator to metal. It is found that in strong magnetic fields above the critical magnetic field, namely in the metallic phase, the oscillation of the magnetization appears. It is shown that this magnetic oscillation comes from the energy bands in the magnetic Brillouin zone that change from the occupied states to unoccupied states or vice vasa.
