论文标题
用MGAL2O4屏障的垂直磁性隧道连接增强的磁化
Enhanced magnetoresistance in perpendicular magnetic tunneling junctions with MgAl2O4 barrier
论文作者
论文摘要
研究了带有MGAL2O4屏障的垂直磁性隧道连接。发现用O2进行反应性RF溅射对于获得基于MGAL2O4的连接中的强垂直磁各向异性和大型隧穿磁磁性至关重要。对于在400c退火的样品中，获得了2.25 mJ/m2的界面垂直磁各向异性能量密度。还达到了60％的增强磁力。 VHALF的偏置电压降低到零偏置值的一半的偏置电压，约为1V，大约高于基于MGO的连接。
Perpendicular magnetic tunnel junction with MgAl2O4 barrier is investigated. It is found that reactive RF sputtering with O2 is essential to obtain strong perpendicular magnetic anisotropy and large tunneling magnetoresistance in MgAl2O4-based junctions. An interfacial perpendicular magnetic anisotropy energy density of 2.25 mJ/m2 is obtained for the samples annealed at 400C. An enhanced magnetoresistance of 60% has also been achieved. The Vhalf, bias voltage at which tunneling magnetoresistance drops to half of the zero-bias value, is found to be about 1V, which is substantially higher than that of MgO-based junctions.
