论文标题

Mott绝缘子钛二氧化钛的异常电化学电容

Anomalous electrochemical capacitance in Mott insulator titanium sesquioxide

论文作者

Kumar, Sumana, Nandi, Sukanta, Mishra, Vikash, Shukla, Alok, Misra, Abha

论文摘要

到目前为止,具有纯电力双层电容的电化学电容器仅限于碳材料。具有法拉达氏伪电容的常规金属氧化物在高温下实质上遭受了材料不稳定的影响,因此需要具有热改善高电力双层电容的新型金属氧化物,并具有材料稳定性。在这项研究中,与在室温下(在室温下的普兰特(Pristine)响应相比,在固体电化学的响应中,在300 $^o $ c的金属状态下,其金属状态的Mott绝缘子在300 $^o $ c的金属状态下,其异常增加了约560%的$ \ $ 560%。在水溶液中,最大电容的最高可达1053 $μ$ f/cm $^2 $,比固态电解质高307%。此外,ti $ _2 $ o $ _3 $的半导体状态在RT的红外照明后的电化学电容中显示了$ \ $ 3500%。在Ti $ _2 $ o $ _3 $中观察到的电化学响应归因于通过重新分布局部电子将半导体向金属状态的过渡。我们的实验结果与第一原理密度功能理论计算有很好的一致性,该理论计算显示,随着温度升高,电荷密度的增加,这主要归因于表面Ti原子。该研究开放有广泛的途径,可以设计理论计算的电化学双层电容,这表明电荷密度随温度升高而增加,这主要归因于表面Ti原子。该研究开放了广泛的途径,以设计高化学稳定性的Ti $ _2 $ o $ _3 $的电化学双层电容。

Electrochemical capacitors with pure electric double layer capacitance are so far largely been limited to carbon materials only. Conventional metal oxides with Faradaic pseudocapacitance substantially suffer from material instability at high temperatures and thus there is a demand for novel metal oxides exhibiting thermally improved high electric double layer capacitance with material stability. In this study, titanium sesquioxide, Ti$_2$O$_3$, a Mott insulator in its metallic state at 300$^o$ C showed an anomalous increase of $\approx$ 560% in the solid-state electrochemical capacitance as compared to its pristine response at room temperature (RT). In aqueous electrolyte, the maximum capacitance was obtained up to 1053 $μ$F/cm$^2$, which is 307% higher than with solid-state electrolyte. Moreover, the semiconducting state of Ti$_2$O$_3$ demonstrated $\approx$ 3500% enhancement in its electrochemical capacitance upon infrared illumination at RT. The observed electrochemical responses in Ti$_2$O$_3$ are attributed to the transition of semiconducting to the metallic state by redistribution of the localized electrons. Our experimental results find a good agreement with the first-principles density-functional theory calculations that revealed an increase in the charge density with the rise in temperature, which is mainly attributed to the surface Ti atoms. The study open has wide avenues to engineer the electrochemical double layer capacitance of theory calculations that revealed an increase in the charge density with the rise in temperature, which is mainly attributed to the surface Ti atoms. The study opens wide avenues to engineer the electrochemical double layer capacitance of Ti$_2$O$_3$ with high chemical stability.

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