论文标题

超高效的直流门票全光石墨烯开关

Ultra-Efficient DC-gated all-optical graphene switch

论文作者

Alaloul, Mohammed, As'ham, Khalil, Hattori, Haroldo T., Miroshnichenko, Andrey E.

论文摘要

全光石墨烯开关的超快响应和宽带吸收是芯片光子开关的高度理想特征。但是,由于石墨烯是一种原子上的材料,因此其引导光学模式的吸收相对较低,从而导致高饱和阈值和这些设备的切换能。为了增强石墨烯的吸收,我们提出了一个集成到硅插槽波导中的电偏向全光石墨烯开关的实用设计,该开关强烈将光学模式限制在插槽区域中,并增强其与石墨烯的相互作用。此外,该设计通过施加<0.5 V的DC电压,将饱和阈值和设备的开关能够电气调整饱和度阈值和开关能量。对于40UM长开关是可以实现的偏差。该设备的报告的性能指标非常有前途,并有望满足下一代光子计算系统的需求。

The ultrafast response and broadband absorption of all-optical graphene switches are highly desirable features for on-chip photonic switching. However, because graphene is an atomically thin material, its absorption of guided optical modes is relatively low, resulting in high saturation thresholds and switching energies for these devices. To boost the absorption of graphene, we present a practical design of an electrically-biased all-optical graphene switch that is integrated into silicon slot waveguides, which strongly confine the optical mode in the slotted region and enhance its interaction with graphene. Moreover, the design incorporates a silicon slab layer and a hafnia dielectric layer to electrically tune the saturation threshold and the switching energy of the device by applying DC voltages of <0.5 V. Using this device, a high extinction ratio (ER) of 10.3dB, a low insertion loss (IL) of <0.7dB, and an ultra-efficient switching energy of 79fJ/bit at 0.23V bias are attainable for a 40um long switch. The reported performance metrics for this device are highly promising and are expected to serve the needs of next-generation photonic computing systems.

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