论文标题
Quasi-2D H-BN/1T-TAS $ _2 $设备的电荷密度波阶段的电控
Electrical Gating of the Charge-Density-Wave Phases in Quasi-2D h-BN/1T-TaS$_2$ Devices
论文作者
论文摘要
我们报告了电荷密度波相位的电控和H-BN中电流的限制的三端1T-TAS $ _2 $异质结构设备。已经证明，栅极偏置的应用可以移动与几乎相应和不固定的电荷密度波相关的源水流电流磁滞。磁滞的演变和电流中突然尖峰的存在，同时扫地电压表明效果是电的，而不是自热。我们将门控归因于电场对栅极介电的原子平面的相应电荷密度波域的电场效应。几乎相应的和不相称的电荷密度波之间的跃迁可以由源水流电流和静电栅诱导。由于在室温下，电荷密度波相位在1T-TAS2中持续存在，因此，当缩放到单个相应域的尺寸和很少的原子平面厚度时，可以设想这种设备的内存应用。
We report on electrical gating of the charge-density-wave phases and current in h-BN capped three-terminal 1T-TaS$_2$ heterostructure devices. It is demonstrated that the application of a gate bias can shift the source-drain current-voltage hysteresis associated with the transition between the nearly commensurate and incommensurate charge-density wave phases. The evolution of the hysteresis and the presence of abrupt spikes in the current while sweeping the gate voltage suggest that the effect is electrical rather than self-heating. We attribute the gating to an electric-field effect on the commensurate charge-density-wave domains in the atomic planes near the gate dielectric. The transition between the nearly commensurate and incommensurate charge-density-wave phases can be induced by both the source-drain current and the electrostatic gate. Since the charge-density-wave phases are persistent in 1T-TaS2 at room temperature, one can envision memory applications of such devices when scaled down to the dimensions of individual commensurate domains and few-atomic plane thicknesses.
