论文标题
电子和孔的石墨烯超导体中的临界场和比热
The critical field and specific heat in the electron- and hole-doped graphene superconductors
论文作者
论文摘要
掺杂是改变给定材料的性质的最突出技术之一。在此，考虑了电子和孔掺杂对石墨烯所选超导特性的影响。从详细的角度来看，在用氮或硼掺杂的石墨烯的代表性情况下，使用了Migdal-Eliashberg形式主义来分析特定的热量和临界磁场。发现电子掺杂在增强上述特性方面比其孔对应物更有利。这些发现通过在Bardeen-Cooper-Schrieffer理论中熟悉的无量纲热力学比率进行了适当总结。为此，提出了石墨烯中超导性研究的未来研究的观点。
Doping is one of the most prominent techniques to alter properties of a given material. Herein, the influence of the electron- and hole-doping on the selected superconducting properties of graphene are considered. In details, the Migdal-Eliashberg formalism is employed to analyze the specific heat and the critical magnetic field in the representative case of graphene doped with nitrogen or boron, respectively. It is found that the electron doping is much more favorable in terms of enhancing the aforementioned properties than its hole counterpart. These findings are appropriately summarized by the means of the dimensionless thermodynamic ratios, familiar in the Bardeen-Cooper-Schrieffer theory. To this end, the perspectives for future research on superconductivity in graphene are drawn.
