论文标题
纳秒激光超掺杂Si $ _ {1-x} $ b $ _x $中变形和B分布的茎分析
STEM analysis of deformation and B distribution in nanosecond laser ultra-doped Si$_{1-x}$ B$_x$
论文作者
论文摘要
我们报告了由纳秒激光掺杂实现的高度B掺杂硅（> 2 at。％）的结构特性。我们通过STEM分析进行了掺杂层的结晶质量，变形和B分布谱，然后进行了HAADF对比研究和GPA，并将结果与SIMS分析和HALL测量结果进行了比较。当将活性B浓度提高到4.3以上时，完全紧张的完美结晶，Si：B层开始显示位错和堆叠断层。当Si：b层很好地容纳底物时，这些仅在8点消失。当增加B掺入时，我们越来越观察到较小的沉淀物，活性B浓度较高和堆叠断层的细丝。在研究的最高浓度下，与活性B浓度降低有关的大沉淀物形成。结构变形，缺陷类型和浓度以及主动B分布与最初的增加和随后的超导性逐渐损失有关。
We report on the structural properties of highly B-doped silicon (> 2 at. %) realised by nanosecond laser doping. We investigate the crystalline quality, deformation and B distribution profile of the doped layer by STEM analysis followed by HAADF contrast studies and GPA, and compare the results to SIMS analyses and Hall measurements. When increasing the active B concentration above 4.3 at.%, the fully strained, perfectly crystalline, Si:B layer starts showing dislocations and stacking faults. These only disappear around 8 at.% when the Si:B layer is well accommodated to the substrate. When increasing B incorporation, we increasingly observe small precipitates, filaments with higher active B concentration and stacking faults. At the highest concentrations studied, large precipitates form, related to the decrease of active B concentration. The structural deformation, defect type and concentration, and active B distribution are connected to the initial increase and subsequent gradual loss of superconductivity.
