论文标题
抗铁磁拓扑绝缘子MNBI $ _2 $ te $ _4 $ with sn掺杂的效果
Effect on the Electronic and Magnetic Properties of Antiferromagnetic Topological Insulator MnBi$_2$Te$_4$ with Sn Doping
论文作者
论文摘要
我们彻底研究了非磁性Sn掺杂对抗铁磁拓扑绝缘子MNBI $ _2 $ TE $ _4 $的电子和磁性的影响。我们观察到，SN掺杂会降低MNBI $ _2 $ _2 $ TE $ _4 $中的平面外抗磁磁（AFM）相互作用，最高为68％\％\％\％，并且在系统上面被发现是progaragnetic。这样，在MNBI $ _2 $ _2 $ te $ _4 $中观察到的异常大厅效应在非常高的7.8 t场上被观察到2吨，而SN掺杂的68％。电运运输测量表明，所有组合物本质上都是金属的，而低温电阻率对AFM有序和掺杂诱导的疾病敏感。 Hall效应研究表明，SN实际上将电子掺入系统中，因此，在SN的68％处将电子载体密度增强了两个阶。相比之下，SNBI $ _2 $ TE $ _4 $被发现是P型系统。角度分辨光发射光谱（ARPES）研究表明，由于持续的dirac表面状态存在于货物频段中，但拓扑特性至少是55 \％的SN，但是在SNBI $ _2 $ _2 $ _4 $ _4 $中，我们无法检测到由于重孔掺杂而无法检测到拓扑状态。总体而言，SN掺杂会显着影响MNBI $ _2 $ TE $ _4 $的电子和磁性。
We thoroughly investigate the effect of nonmagnetic Sn doping on the electronic and magnetic properties of antiferromagnetic topological insulator MnBi$_2$Te$_4$. We observe that Sn doping reduces the out-of-plane antiferromagnetic (AFM) interactions in MnBi$_2$Te$_4$ up to 68\% of Sn concentration and above the system is found to be paramagnetic. In this way, the anomalous Hall effect observed at a very high field of 7.8 T in MnBi$_2$Te$_4$ is reduced to 2 T with 68\% of Sn doping. Electrical transport measurements suggest that all compositions are metallic in nature, while the low-temperature resistivity is sensitive to the AFM ordering and to the doping-induced disorder. Hall effect study demonstrates that Sn actually dopes electrons into the system, thus, enhancing the electron carrier density almost by two orders at 68\% of Sn. In contrast, SnBi$_2$Te$_4$ is found to be a p-type system. Angle-resolved photoemission spectroscopy (ARPES) studies show that the topological properties are intact at least up to 55\% of Sn as the Dirac surface states are present in the valance band, but in SnBi$_2$Te$_4$ we are unable to detect the topological states due to heavy hole doping. Overall, Sn doping significantly affects the electronic and magnetic properties of MnBi$_2$Te$_4$.
