论文标题
Zn和N掺杂Tio $ _ {2} $薄膜的亲水性和光学特性的研究
The Study of Hydrophilicity and Optical Properties of Zn and N-doped TiO$_{2}$ Thin Films
论文作者
论文摘要
在宽带隙半导体中，Tio $ _ {2} $是用于不同光催化过程的高度稳定且具有成本效益的半导体，例如水分割，化学废物降解，抗微细菌活动等。具有低带隙的高亲水性（表面现象）的材料需要提高光催化效率。我们报告了使用自旋涂层技术提高表面润湿性的Zn（4 wt。％）和n（4 wt。％）掺杂的Tio $ _ {2} $薄膜的合成。 XRD模式显示了Tio $ _ {2} $的纯氧化酶相的生长。紫外吸收光谱显示在Zn和N掺杂的Tio $ _ {2} $薄膜的带隙中的较小增量。纯Tio $ _ {2} $的水接触角为33.45°，在4wt％掺杂Zn和N之后，水接触角度降低至17.94°。结果表明，Zn和N Doped Tio $ _ {2} $薄膜中的水亲水性增强。
Among the wide bandgap semiconductors, TiO$_{2}$ is the highly stable and cost-efficient semiconductor used for the different photocatalysis processes like water splitting, chemical waste degradation, anti-micro bacterial activities, and more. Materials showing high hydrophilicity (surface phenomenon) with low bandgap are required to improve photocatalysis efficiency. We report the synthesis of Zn (4 wt.%) and N (4 wt.%) doped TiO$_{2}$ thin films using the spin coating technique to improve surface wettability. The XRD pattern shows the growth of the pure anatase phase of TiO$_{2}$. UV absorption spectra show a minor increment in the bandgap of the Zn and N doped TiO$_{2}$ thin films. The water contact angle with pure TiO$_{2}$ is 33.45° and reduces to 17.94° after 4wt% doping of Zn and N. The results show the enhanced hydrophilicity in the Zn and N doped TiO$_{2}$ thin films.
