论文标题
高阶拓扑绝缘子中的电荷轴耦合驱动的拓扑量子过渡
Topological quantum transition driven by charge-phonon coupling in higher-order topological insulators
论文作者
论文摘要
我们研究了由电子 - phonon相互作用驱动的修饰的凯恩 - 梅尔模型的二阶拓扑量子过渡。结果表明，裸露的凯恩 - 梅尔模型的系统参数被电子 - phonon相互作用重新归一化。从裸机模型的二阶拓扑阶段开始，增加的电子偶联强度可以将二阶拓扑绝缘子推向半分阶段。这种二阶拓扑相变的特征是带隙的闭合，平均费米诺数字的不连续性和拓扑不变。
We investigate a second-order topological quantum transition of a modified Kane-Mele model driven by electron-phonon interaction. The results show that the system parameters of the bare modified Kane-Mele model are renormalized by the electron-phonon interaction. Starting from the second-order topological phase for the bare model, the increasing electron-phonon coupling strength can drive the second-order topological insulator into a semimetal phase. Such a secondorder topological phase transition is characterized by the band-gap closing, discontinuity of averaged ferminoic number and topological invariant.
