论文标题
Axion绝缘子$ \ rm {mnbi_2te_4} $中的无耗散层
Dissipationless Layertronics in Axion Insulator $\rm{MnBi_2Te_4}$
论文作者
论文摘要
轴突绝缘子中的表面电子具有拓扑层的自由度，然后是外来传输现象，例如，层霍尔效应[Gao等，Nature 595，521（2021）]。在这里，我们建议可以根据量身定制的域结构以反铁磁$ \ rm {mnbi_2te_4} $来操纵这种自由度。这使$ \ rm {mnbi_2te_4} $是一个多功能平台，以利用“ layerTronics”来编码，处理和存储信息。重要的是，可以使用层锁定的手性域壁模式来实现层滤波器，层阀和层换空器设备。域壁模式的无耗散性质使层曲线设备的性能优于Spintronics和Valleytronics中的层。具体而言，Datta-DAS晶体管的图层反向器也填充了在Valleytronics中设计山谷反向器的空白。我们的作品阐明了在层基因技术框架中构建具有高性能和低能消耗的新一代电子设备。
Surface electrons in axion insulators are endowed with a topological layer degree of freedom followed by exotic transport phenomena, e.g., the layer Hall effect [Gao et al., Nature 595, 521 (2021)]. Here, we propose that such a layer degree of freedom can be manipulated in a dissipationless way based on the antiferromagnetic $\rm{MnBi_2Te_4}$ with tailored domain structure. This makes $\rm{MnBi_2Te_4}$ a versatile platform to exploit the "layertronics" to encode, process, and store information. Importantly, the layer filter, layer valve, and layer reverser devices can be achieved using the layer-locked chiral domain wall modes. The dissipationless nature of the domain wall modes makes the performance of the layertronic-devices superior to those in spintronics and valleytronics. Specifically, the layer reverser, a layer version of Datta-Das transistor, also fills up the blank in designing the valley reverser in valleytronics. Our work sheds light on constructing new generation electronic devices with high performance and low energy consumption in the framework of layertronics.
