论文标题
Josephson二极管效应高流动性nanoflags
Josephson Diode Effect in High Mobility InSb Nanoflags
论文作者
论文摘要
我们报告说,由于强烈的自旋轨道耦合,在单个弹道INSB纳米叶子约瑟夫森连接中,非逆转耗散运输的证据。应用平面磁场,我们观察到两个相反电流传播方向的超电流中的不平等。这表明这些设备可以用作约瑟夫森二极管,而无耗散电流仅以一个方向流动。对于小场,超电流不对称与外部磁场线性增加,然后随着zeeman能量变得相关,它在较高磁场下最终降至零之前饱和。我们表明,当平面内场垂直于当前矢量时,效果是最大的,该载体将Rashba自旋轨道耦合识别为主要对称性机制。尽管这些高质量的INSB纳米晶状体中载体浓度的变化并没有显着影响二极管效应,但温度升高会强烈抑制。我们的实验发现与弹道短连接的模型一致,并表明二极管效应对该材料是固有的。我们的结果将Insb Josephson Diodes作为超导电子产品的有用元素。
We report evidence of non-reciprocal dissipation-less transport in single ballistic InSb nanoflag Josephson junctions, owing to a strong spin-orbit coupling. Applying an in-plane magnetic field, we observe an inequality in supercurrent for the two opposite current propagation directions. This demonstrates that these devices can work as Josephson diodes, with dissipation-less current flowing in only one direction. For small fields, the supercurrent asymmetry increases linearly with the external field, then it saturates as the Zeeman energy becomes relevant, before it finally decreases to zero at higher fields. We show that the effect is maximum when the in-plane field is perpendicular to the current vector, which identifies Rashba spin-orbit coupling as the main symmetry-breaking mechanism. While a variation in carrier concentration in these high-quality InSb nanoflags does not significantly influence the diode effect, it is instead strongly suppressed by an increase in temperature. Our experimental findings are consistent with a model for ballistic short junctions and show that the diode effect is intrinsic to this material. Our results establish InSb Josephson diodes as a useful element in superconducting electronics.