论文标题
3D相互连接的银纳米线中的回忆和隧道效应
Memristive and tunneling effects in 3D interconnected silver nanowires
论文作者
论文摘要
由于它们的回忆性能，对于神经形态计算应用，纳米线网络非常有前途。实际上，此类系统的电阻可以随着输入电压或电流而发展，因为它赋予了设备的突触行为。在这里，我们提出了一个银纳米线（AG-NW）网络，该网络通过电沉积在纳米膜中生长，并通过电沉积互连纳米孔。这种自下而上的方法制造方法提供了具有3D体系结构和高密度AG-NWS的导电网络。由此产生的3D互连AG-NW网络表现出高的初始电阻和回忆行为。预计这将是由于AG-NW网络内部传导丝的创造和破坏而产生的。此外，经过几个测量循环，网络的电阻从高电阻范围内的高电阻状态转换为GOHM范围内，并在KOHM范围内带有隧道传导到低电阻状态。
Due to their memristive properties nanowire networks are very promising for neuromorphic computing applications. Indeed, the resistance of such systems can evolve with the input voltage or current as it confers a synaptic behaviour to the device. Here, we propose a network of silver nanowires (Ag-NWs) which are grown in a nanopourous membrane with interconnected nanopores by electrodeposition. This bottom-up approach fabrication method gives a conducting network with a 3D architecture and a high density of Ag-NWs. The resulting 3D interconnected Ag-NW network exhibits a high initial resistance as well as a memristive behavior. It is expected to arise from the creation and the destruction of conducting silver filaments inside the Ag-NW network. Moreover, after several cycles of measurement, the resistance of the network switches from a high resistance regime, in the GOhm range, with a tunnel conduction to a low resistance regime, in the kOhm range.
