论文标题
高功率芯片集成激光器
High Power on-chip Integrated Laser
论文作者
论文摘要
缺乏高功率集成激光器一直在限制硅光子学。尽管芯片尺度的激光集成取得了很多进展，但功率仍低于关键应用所需的水平。高功率的主要抑制因素是高泵电流下的低能效率，这取决于活动设备的小尺寸。在这里，我们通过演示一个依赖于宽区域多模的耦合到硅氮化物反馈芯片的平台来打破此功率限制，该芯片充当外部腔。硅氮化物芯片提供的反馈通过环谐振器和单模过滤器将其路由，从而导致原本模具增益芯片将其功率集中到单个高度连接的模式中。我们的设备可产生150兆瓦的功率和400 kHz线宽。我们达到了这些高性能指标，同时保持了3 mm^2的少量足迹。
The lack of high power integrated lasers have been limiting silicon photonics. Despite much progress made in chip-scale laser integration, power remains below the level required for key applications. The main inhibiting factor for high power is the low energy efficiency at high pumping currents, dictated by the small size of the active device. Here we break this power limitation by demonstrating a platform that relies on the coupling of a broad-area multimode gain to a silicon-nitride feedback chip, which acts as an external cavity. The feedback provided by the silicon-nitride chip is routed through a ring resonator and a single-mode filter, thus causing the otherwise multimode-gain chip to concentrate its power into a single highly-coherent mode. Our device produces more than 150 mW of power and 400 kHz linewidth. We achieve these high-performance metrics while maintaining a small footprint of 3 mm^2.
