论文标题
准二维半导体Mg $ _3 $ si $ _2 $ te $ _6 $的晶体和电子结构
Crystal and electronic structure of a quasi-two-dimensional semiconductor Mg$_3$Si$_2$Te$_6$
论文作者
论文摘要
我们报告了基于SI的三元半导体Mg $ _3 $ si $ _2 $ _2 $ te $ _6 $的合成和表征，该$ _6 $表现出准二维结构，其中Mg img ions trigonal mg $ _2 $ _2 $ _2 $ _2 $ _2 $ _6 $ _6 $ _6 $ layers a Slim aim Mg ions mg ions ions Mg ions。进行了可见的吸收光谱和密度功能理论计算以研究电子结构。实验确定的直接带隙为1.39 eV，与密度函数理论计算的值一致。我们的结果表明，MG $ _3 $ SI $ _2 $ TE $ _6 $是一个直接的间隙半导体，其间隙相对较窄，这是红外光电设备的潜在候选者。
We report the synthesis and characterization of a Si-based ternary semiconductor Mg$_3$Si$_2$Te$_6$, which exhibits a quasi-two-dimensional structure, where the trigonal Mg$_2$Si$_2$Te$_6$ layers are separated by Mg ions. Ultraviolet-visible absorption spectroscopy and density functional theory calculations were performed to investigate the electronic structure. The experimentally determined direct band gap is 1.39 eV, consistent with the value of the density function theory calculations. Our results reveal that Mg$_3$Si$_2$Te$_6$ is a direct gap semiconductor with a relatively narrow gap, which is a potential candidate for infrared optoelectronic devices.
