论文标题
Dirac半含量$ cd_ {3} as _ {2} $中表面和散装状态脱钩的证据
Evidence of decoupling of surface and bulk states in Dirac semimetal $Cd_{3}As_{2}$
论文作者
论文摘要
由于其在拓扑量子计算，低能电子应用和微波频率范围内的单个光子检测中，狄拉克半法值吸引了当前的大量兴趣。以下是分析零磁场弱抗敌国行为的低磁场（b）场$ cd_ {3} as_ {2} $薄片薄片。在高温下，相干长度$ l_ϕ $首先随着温度降低（t）而增加，并遵循$ l_ϕ \ propto $ t $^{ - 0.4} $的功率定律依赖性。 〜3k以下，$ l_ϕ $倾向于饱和至〜180 nm。与独立传输通道相关的另一个拟合参数$α$显示了t> 3K的对数温度依赖性，但也倾向于饱和约3K。饱和值〜1.45非常接近1.5，表明三个独立的电子传输通道，我们将其解释为由于顶部和底部表面以及整体的脱钩。据我们所知，该结果首先提供了证据，表明表面和散装状态可以在dirac semimetal $ cd_ {3} as_ {2} $中的电子传输中脱钩。
Dirac semimetals have attracted a great deal of current interest due to their potential applications in topological quantum computing, low-energy electronic applications, and single photon detection in the microwave frequency range. Herein are results from analyzing the low magnetic (B) field weak-antilocalization behaviors in a Dirac semimetal $Cd_{3}As_{2}$ thin flake device. At high temperatures, the phase coherence length $l_ϕ$ first increases with decreasing temperature (T) and follows a power law dependence of $l_ϕ\propto$ T$^{-0.4}$. Below ~ 3K, $l_ϕ$ tends to saturate to a value of ~ 180 nm. Another fitting parameter $α$, which is associated with independence transport channels, displays a logarithmic temperature dependence for T > 3K, but also tends to saturate below ~ 3K. The saturation value, ~ 1.45, is very close to 1.5, indicating three independent electron transport channels, which we interpret as due to decoupling of both the top and bottom surfaces as well as the bulk. This result, to our knowledge, provides first evidence that the surfaces and bulk states can become decoupled in electronic transport in Dirac semimetal $Cd_{3}As_{2}$.
