论文标题
自旋极化电子梁的产生超过III-V半导体
Spin polarized electron beams production beyond III-V semiconductors
论文作者
论文摘要
本文总结了基于III-V半导体的光电模式的现状，用于自旋极化电子束的产生。说明了某些新的加速器设施或拟议的现有升级所需的最高平均光束电流提供长期可靠性的限制。鉴定出有希望的替代材料类别显示可以利用的特性来合成光电模式结构，这些结构可以超过IIII-V半导体在生产自旋极化电子束的生产中，并支持新设施的高级电子源的工作条件。
This paper summarizes the state of the art of photocathode based on III-V semiconductors for spin polarized electron beam production. The limitations preventing this class of material to provide the long term reliability at the highest average beam currents necessary for some of the new accelerator facilities or proposed upgrades of existing ones are illustrated. Promising alternative classes of materials are identified showing properties that can be leveraged to synthesize photocathode structures that can outperform III-V semiconductors in the production of spin polarized electron beams and support the operating conditions of advanced electron sources for new facilities.
