论文标题
关于低温的耗尽行为，共价键合硅传感器二极管
On the depletion behaviour of low-temperature covalently bonded silicon sensor diodes
论文作者
论文摘要
低温共价直接晶片粘合键可以融合多个半导体晶片，而在粘合界面上没有任何其他材料。在粒子像素探测器的背景下，这可能为将传感器连接以读取芯片而提供颠簸键的替代方案。先前的研究表明，键合期间在界面形成的无定形层对电荷传播有害。为了研究键合界面对信号收集的影响，我们通过将高抗性n粘结到高抗性P型硅晶片中制造了自定义测试结构，从而形成了P-N连接。扫描透射电子显微镜确实显示了Ca的形成。界面处的3nm宽无形层。使用扫描瞬态电流技术（TCT）设置，我们能够记录生成的信号。用不同的波长和不同侧面的光照亮我们的样品，表明粘合结构的P侧可以完全耗尽，但不能完全耗尽。这表明我们将其归因于粘结界面的存在强烈不对称的耗竭行为。
Low temperature covalent direct wafer-wafer bonding allows for the fusion of multiple semiconductor wafers without any additional material at the bonding interface. In the context of particle pixel detectors this might provide an alternative to bump-bonding for joining sensors to readout chips. Previous investigations have shown that the amorphous layer formed at the interface during bonding is detrimental to charge propagation. To investigate the influence of the bonding interface on signal collection we have fabricated custom test structures by bonding high-resistivity N to high-resistivity P-type silicon wafers thus forming P-N junctions. Scanning transmission electron microscopy shows indeed the formation of ca. 3nm wide amorphous layer at the interface. Using a scanning transient current technique (TCT) setup we were able to record generated signals. Illuminating our sample with light of different wavelengths and from different sides, indicates that the P side of the bonded structures can be fully depleted, but not the N side. This indicates a strongly asymmetric depletion behaviour which we attribute to the presence of the bonding interface.
