论文标题
高机动性Tri-Gate $β$ -GA $ _2 $ o $ _3 $ MESFET，功率超过0.9 gw/cm $^2 $
High-Mobility Tri-Gate $β$-Ga$_2$O$_3$ MESFETs with a Power Figure of Merit over 0.9 GW/cm$^2$
论文作者
论文摘要
在这封信中，表现出了0.95 gw/cm $^{2} $的高功率数字，以表现出鳍形三盖$β$ -ga $ -ga $ -ga $ _ {2} $ o $ $ _ {3} $横向mesfets的高功率数字 - 任何$β$ - ga $ -ga $ -ga $ _ {2} $ o $ o $ o $ $ o $ $ o $ $ $ $ _} $ transor的记录高。开发了一个低温的未扎根的缓冲渠道堆栈设计，该设计展示了掺杂的高厅和漂移电子的动机，以$β$ -ga -ga $ _ {2} $ o $ $ _ {3} $通道允许在电阻r $ $ _ {ON} $ in $β$ -ga $ -ga $ _ $ _} $ _ {2} $ e的电阻R $ _ {on} $ in} $ _ {2} $ o的电阻r $ _ {on} $} 3.3 3 $ __________的$ o _} 33.33 33.33 3.3 3.3 3.3 3.3 3.3 3.3 3.3 3 $______。 Fin Widths（W $ _ {fin} $）为1.2-1.5 $μ$ m，每个设备有25个鳍（n $ _ {fin} $），沟槽深度为$ \ sim $ 1 $ 1 $ m $ m。 A $β$ -GA $ _2 $ o $ _3 $ MESFET，源含量为6.4 $μ$ m，电流高（187 mA/mm），低R $ _ {ON} $（20.5 $ω$。$ .mm）和高平均分解场（4.2 mv/cm）。所有设备均显示出非常低的反向泄漏，直到灾难性故障的故障电压从1.1kV缩放到$ \ sim $ 3KV。这项工作证明了渠道工程改善$β$ -GA $ _ {2} $ o $ _ {3} $设备性能降低低至中型电压应用的传导损失的潜力。
In this letter, fin-shape tri-gate $β$-Ga$_{2}$O$_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm$^{2}$ - a record high for any $β$-Ga$_{2}$O$_{3}$ transistor to date. A low-temperature undoped buffer-channel stack design is developed which demonstrates record high Hall and drift electron mobilities in doped $β$-Ga$_{2}$O$_{3}$ channels allowing for low ON resistances R$_{ON}$ in $β$-Ga$_{2}$O$_{3}$ MESFETs. Fin-widths (W$_{fin}$) were 1.2-1.5 $μ$m and there were 25 fins (N$_{fin}$) per device with a trench depth of $\sim$1$μ$m. A $β$-Ga$_2$O$_3$ MESFET with a source-drain length of 6.4 $μ$m exhibits a high ON current (187 mA/mm), low R$_{ON}$ (20.5 $Ω$.mm) and a high average breakdown field (4.2 MV/cm). All devices show very low reverse leakage until catastrophic breakdown for breakdown voltages scaled from 1.1kV to $\sim$3kV. This work demonstrates the potential of channel engineering in improving $β$-Ga$_{2}$O$_{3}$ device performance toward lower conduction losses for low-to-medium voltage applications.
