论文标题
y $ _2 $ nimno $ _6 $ nanorods
Room-temperature surface multiferroicity in Y$_2$NiMnO$_6$ nanorods
论文作者
论文摘要
We report observation of surface-defect-induced room temperature multiferroicity - surface ferromagnetism ($M_S$ at 50 kOe $\sim$0.005 emu/g), ferroelectricity ($P_R$ $\sim$2 nC/cm$^2$), and significantly large magnetoelectric coupling (decrease in $P_R$ by $\sim$80\% under $ \ sim $ 15 koe field) - 在纳米棒(直径$ \ sim $ 100 nm)中,double perovskite y $ _2 $ nimno $ _6 $ compound。 In bulk form, this system exhibits multiferroicity only below its magnetic transition temperature $T_N$ $\approx$ 70 K. On the other hand, the oxygen vacancies, formed at the surface region (thickness $\sim$10 nm) of the nanorods, yield long-range magnetic order as well as ferroelectricity via Dzyloshinskii-Moriya exchange coupling interactions with strong Rashba spin-orbit耦合。磁场下的$ p_r $急剧下降表明磁性和铁电度之间也有很强的交叉耦合。观察纳米级室温磁电耦合的化合物,该化合物的散装形式仅表现出低于70 K以下的多效性,可强调通过表面缺陷诱导磁性多效性的替代途径,因此,与磁性易于插入的磁性特性相一致在批量上不展示此类特征的电影。
We report observation of surface-defect-induced room temperature multiferroicity - surface ferromagnetism ($M_S$ at 50 kOe $\sim$0.005 emu/g), ferroelectricity ($P_R$ $\sim$2 nC/cm$^2$), and significantly large magnetoelectric coupling (decrease in $P_R$ by $\sim$80\% under $\sim$15 kOe field) - in nanorods (diameter $\sim$100 nm) of double perovskite Y$_2$NiMnO$_6$ compound. In bulk form, this system exhibits multiferroicity only below its magnetic transition temperature $T_N$ $\approx$ 70 K. On the other hand, the oxygen vacancies, formed at the surface region (thickness $\sim$10 nm) of the nanorods, yield long-range magnetic order as well as ferroelectricity via Dzyloshinskii-Moriya exchange coupling interactions with strong Rashba spin-orbit coupling. Sharp drop in $P_R$ under magnetic field indicates strong cross-coupling between magnetism and ferroelectricity as well. Observation of room temperature magnetoelectric coupling in nanoscale for a compound which, in bulk form, exhibits multiferroicity only below 70 K underscores an alternative pathway for inducing magnetoelectric multiferroicity via surface defects and, thus, in line with magnetoelectric property observed, for example, in domain walls or boundaries or interfaces of heteroepitaxially grown thin films which do not exhibit such features in their bulk.