论文标题
电子迁移率超过$ 7 \ times10^5cm^2/vs $的变质INAS/INGAAS QWS
Metamorphic InAs/InGaAs QWs with electron mobilities exceeding $7\times10^5cm^2/Vs$
论文作者
论文摘要
我们介绍了一项研究，研究了应变的Inalas缓冲层对通过分子束外延生长的变质INAS/INGAAS量子井对GAAS的影响。通过X射线衍射和高分辨率透射电子显微镜评估缓冲层，INGAAS屏障和INAS井的残留应变。通过仔细选择缓冲层的组成曲线和厚度，几乎可以增加嵌入INAS量子的未训练的INGAAS屏障，厚度良好，厚度为7nm。这允许达到低温电子迁移率要比先前报道的对于通过GAAS上的变质生长获得的样品所报道的要高得多，并且与INP基板上生长的样品所获得的值相当。
We present a study on the influence of strain-relieving InAlAs buffer layers on metamorphic InAs/InGaAs quantum wells grown by molecular beam epitaxy on GaAs. Residual strain in the buffer layer, the InGaAs barrier and the InAs wells were assessed by X-ray diffraction and high-resolution transmission electron microscopy. By carefully choosing the composition profile and thicknesses of the buffer layer, virtually unstrained InGaAs barriers embedding an InAs quantum well with thickness up to 7nm can be grown. This allows reaching low-temperature electron mobilities much higher than previously reported for samples obtained by metamorphic growth on GaAs, and comparable to the values achieved for samples grown on InP substrates.
