论文标题
激光诱导的激发动力学的波长依赖性硅
Wavelength dependence of laser-induced excitation dynamics in silicon
论文作者
论文摘要
激光波长对硅载体动力学和硅阈值的影响进行了数值研究。使用三温模型（3TM）研究了硅中的激光激发动力学。我们分别考虑电子，孔和晶格温度的演变，包括对硅光学特性的带隙重新归一化效应。有限差时间域方法用于对激光场进行建模。使用3TM计算的损坏阈值与实验合理一致。我们的结果表明，带间激发，等离子体加热和电子 - 音波弛豫过程的竞争定义了各种波长和脉冲持续时间的损伤阈值。
Effect of laser wavelength on the carrier-phonon dynamics and damage threshold of silicon is studied numerically. Laser excitation dynamics in silicon is studied using Three-Temperature Model (3TM). We consider the evolution of electron, hole, and lattice temperatures separately and including band-gap re-normalization effect on optical properties of silicon. Finite Difference Time Domain method is used to model the laser field. Damage threshold calculated using the 3TM is in reasonable agreement with the experiments. Our results indicate that the competition of inter-band excitation, plasma heating, and electron-phonon relaxation process defines the damage threshold for various wavelengths and pulse durations.
