论文标题
在Zener-Klein隧道非线性启用的封闭石墨烯P-I-N现场效应结构中的谐振等离激元terahertz检测
Resonant plasmonic terahertz detection in gated graphene p-i-n field-effect structures enabled by the Zener-Klein tunneling nonlinearity
论文作者
论文摘要
我们提出和分析了基于门控石墨烯P-I-N（GPIN）场效应晶体管（FET）结构的Terahertz（THZ）检测器。由于Zener-Klein隧道，大门之间的反向偏向I-Recion扮演了电子和孔喷射器的作用，表现出非线性$ I-V $特征。该区域实现了THZ信号矫正，可提供检测。封闭式区域充当电子和孔储层以及THZ谐振等离子体腔。电子和孔等离子体振荡的共振激发导致THZ检测器响应的信号频率接近等离子体频率及其谐波的响应性大幅提高。由于I-Region AC电导频率依赖性的细节，与运输时间效应相关，因此频率的GPIN-FET响应对应于较高的等离激元模式的激发，可能比基本模式更强。 GPIN-FET在室温下可以表现出很高的响应性。由于载体动量松弛减弱，后者的降低可能导致其进一步的增强。
We propose and analyze the terahertz (THz) detectors based on a gated graphene p-i-n (GPIN) field-effect transistor (FET) structure. The reverse-biased i-region between the gates plays the role of the electrons and holes injectors exhibiting nonlinear $I-V$ characteristics due to the Zener-Klein tunneling. This region enables the THz signal rectification, which provides their detection. The gated regions serve as the electron and hole reservoirs and the THz resonant plasma cavities. The resonant excitation of the electron and hole plasmonic oscillations results in a substantial increase in the THz detector responsivity at the signal frequency close to the plasma frequency and its harmonics. Due to the specifics of the i-region AC conductance frequency dependence, associated with the transit-time effects, the GPIN-FET response at the frequency, corresponding to the excitation of a higher plasmonic mode, can be stronger than for the fundamental mode. The GPIN-FETs can exhibit fairly high responsivity at room temperatures. Lowering of the latter can result in its further enhancement due to weakening of the carrier momentum relaxation.
