论文标题
库仑封锁状态中28 nm低温MOSFET的随机电报噪声
Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime
论文作者
论文摘要
我们观察到来自14 K阈值附近的商业体积28 nm P-MOSFET（PMO）的两级随机电报噪声（RTN）的丰富现象，在该阈值中，库仑封锁（CB）驼峰来自该通道中形成的量子点（QD）。在CB驼峰上观察到最小RTN，高电流RTN水平急剧切换到低电流水平。 RTN振幅和功率频谱密度的栅极电压依赖性与CB驼峰区域的直流传输曲线的跨传导良好。我们的工作明确地捕获了当前和噪声中的这些QD传输签名，即使在14 K时也揭示了商业短通道PMO的量子限制效应，比QD实验的典型稀释冰箱温度高100倍，超过100倍（<100 mk）。我们设想，我们报告的RTN特性植根于QD，缺陷陷阱对于较小的技术节点将更加突出，在此节点中应在低温CMOS电路设计中仔细检查量子效应。
We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where a Coulomb blockade (CB) hump arises from a quantum dot (QD) formed in the channel. Minimum RTN is observed at the CB hump where the high-current RTN level dramatically switches to the low-current level. The gate-voltage dependence of the RTN amplitude and power spectral density match well with the transconductance from the DC transfer curve in the CB hump region. Our work unequivocally captures these QD transport signatures in both current and noise, revealing quantum confinement effects in commercial short-channel PMOS even at 14 K, over 100 times higher than the typical dilution refrigerator temperatures of QD experiments (<100 mK). We envision that our reported RTN characteristics rooted from the QD and a defect trap would be more prominent for smaller technology nodes, where the quantum effect should be carefully examined in cryogenic CMOS circuit designs.
