论文标题
缺陷引起的旋转和谷地极化状态的最新进展
Recent advances of defect-induced spin and valley polarized states in graphene
论文作者
论文摘要
石墨烯中的电子具有四倍的自旋和山谷归化性，这是由于独特的二分蜂窝晶状体和极弱的自旋轨道耦合，可以支持一系列破碎的对称状态。石墨烯中的原子尺度缺陷有望提高纳米级的这些堕落自由度，因此会导致量子丰富的量子状态，从而突出了有希望的旋转三位型和valleytronics的方向。在本文中，我们主要回顾了近期的扫描隧道显微镜（STM）在石墨烯中单个原子尺度缺陷引起的自旋和/或山谷极化状态上的进步，包括单碳空位，氮原子掺杂剂和氢原子化学感应。最后，我们在这一领域中给出了一个视角。
Electrons in graphene have fourfold spin and valley degeneracies owing to the unique bipartite honeycomb lattice and an extremely weak spin-orbit coupling, which can support a series of broken symmetry states. Atomic-scale defects in graphene are expected to lift these degenerate degrees of freedom at the nanoscale, and hence, lead to rich quantum states, highlighting promising directions for spintronics and valleytronics. In this article, we mainly review the recent scanning tunneling microscopy (STM) advances on the spin and/or valley polarized states induced by an individual atomic-scale defect in graphene, including a single-carbon vacancy, a nitrogen-atom dopant, and a hydrogen-atom chemisorption. Lastly, we give a perspective in this field.
