论文标题
X射线技术辐照，用于硅硅传感器和电子设备中的电子设备的TID研究
X-ray technological irradiation for TID studies on silicon sensor and electronic devices in a medical facility
论文作者
论文摘要
总电离剂量效应的技术测试不仅需要在高能物理实验中开发的硅颗粒传感器，而且还需要用于商用，汽车和空间应用中的电子设备和半导体元件。使用X射线辐照器，这些技术测试和研究不仅可以在为此任务中明确构建的设施中进行，而且还可以在满足某些最小值要求时在医学或生物学研究设施中进行。通常，可以在不干扰设施的医学和生物学活动的情况下进行这种辐射。在本文中，将描述此类研究所需的最低仪器，并将详细描述SIPM X射线辐照运动的TID表征SIPM X射线辐照运动，该运动在2021年5月在意大利TIFPA-INFN TRENTO中心实验室中实现，并使用最初用于医学和生物学辐射的工具。
Technological tests of Total Ionizing Dose effects are required not only for silicon particle sensors developed in high energy physics experiments, but also for electronic devices and semiconductor elements used in commercial, automotive and space applications. Using x-ray irradiators, these technological tests and studies can be performed not only in facilities explicitly built for this mission, but also in medical or biological research facilities when some minima requirements are satisfied. Generally this irradiation can be performed without interfering with the medical and biological activities of the facility. In this article will be described the minimum instrumentation required for this type of studies and will be given a detailed description of the preparation and realization of a SiPM x-ray irradiation campaign for TID characterization realized in the Italian TIFPA-INFN Trento Center Laboratory in May 2021, using instruments originally realized for medical and biological irradiation.
