论文标题
方向固化期间硅的晶界发展：一项相距研究
Grain Boundary Development of Silicon during Directional Solidification: A Phase-Field Study
论文作者
论文摘要
为了控制定向固化过程中多晶（MC）硅的晶粒结构，应了解晶界（GB）相对于温度梯度的开发过程。与各向异性界面能量和各向异性附着动力学系数合并的相位模型已产生了生长的硅晶晶体的平面形状，该形状与实验观察结果一致。已经模拟了在各种生长速度下耦合硅晶粒的生长，以看到固液前沿的形态和GBS的发育过程。已经发现，根据生长速度和两个侧面晶粒之间的晶粒之间的方向关系，GB的方向由动力学规则或平衡规则控制。带有刻面面板表面的凹槽下方的GB遵循两个表面的一行，而GB的方向在凹槽具有粗糙的表面时远离双层分子。这项研究提供了一种数值方法，可以预测MC-Silicon的晶体结构演化中的谷物边界发展并获得见解，该方法可以用于高效和低成本太阳能电池。
In order to control the grain structure of multi-crystalline (mc) silicon during directional solidification, the development process of grain boundaries (GBs) with respect to the temperature gradient should be understood. A phase-field model incorporated with anisotropic interface energy and anisotropic attachment kinetic coefficient has produced the faceted shape of a growing silicon crystal, which is in agreement with experimental observation. The growth of coupled silicon grains under various growth velocities has been simulated to see the morphology of the solid-liquid front and the development process of the GBs. It has been found that the direction of GB is governed by either the kinetic rule or the equilibrium rule at the grain groove, depending on the growth velocity and the orientation relationship between grains on two sides. The GB beneath a groove with facet-facet surfaces follows the bisector of the two surfaces, while the direction of a GB stays far from the bisector when the groove has a rough surface. This research provides a numerical approach to predicting grain boundary development and gaining insights from grain structure evolution in mc-silicon, which can be potentially applied for high-efficiency and low-cost solar cells.
