论文标题
可调的多峰值完美吸收剂基于唯一的唯一性能，用于高性能近红外屈光索引感应
Tunable Multi-Peak Perfect Absorbers Based on Borophene for High-Performance Near-Infrared Refractive Index Sensing
论文作者
论文摘要
唯一的二维单元素材料最近引起了极大的关注，因为它具有超高的表面体积比和出色的表面敏感性，因此折射率感测。但是，当前的研究主要集中于设计具有单峰吸收的基于硼苯的传感器，与多峰传感器的性能相比，该传感器缺乏可靠性。在本文中，提出了具有多个几乎完美吸收峰的高性能硼苯折射率传感器。使用有限差分时间域（FDTD）模拟优化了MetadeVices的几何参数，以在近红外（近红外）状态中获得三个强吸收峰，其强度为99.72％，99.18％和98.13％。 Further calculations show that the sensitivities of the three strong peaks reach 339.1 nm shift per refractive index units (nm/RIU), 410.1 nm/RIU, and 738.1 nm/RIU, and their corresponding figure of merits (FOMs) reach up to 15.41/RIU, 14.65/RIU and 10.85/RIU, respectively, exhibiting great potential for near-IR折射率感测。此外，可以通过调节硼苯载体密度来轻松调节这三个吸收峰，这可以通过施加不同的外部电偏偏电压来实现。这些结果可以为开发多峰近IR动态集成光子设备提供理论指导
Borophene has recently attracted significant attention as an emerging two-dimensional monoelemental material for refractive index sensing because of its ultra-high surface-to-volume ratio and outstanding surface sensitivity. However, current research mainly focuses on designing borophene-based sensors with single-peak absorption, which lacks reliability compared to the performance of multi-peak sensors. In this paper, high-performance borophene refractive index sensors with multiple nearly perfect absorption peaks are proposed. The geometric parameters of the metadevices are optimized using finite-difference time-domain (FDTD) simulations to obtain three strong absorption peaks in the near-infrared (near-IR) regime with intensities of 99.72%, 99.18%, and 98.13%. Further calculations show that the sensitivities of the three strong peaks reach 339.1 nm shift per refractive index units (nm/RIU), 410.1 nm/RIU, and 738.1 nm/RIU, and their corresponding figure of merits (FOMs) reach up to 15.41/RIU, 14.65/RIU and 10.85/RIU, respectively, exhibiting great potential for near-IR refractive index sensing. Moreover, the three absorption peaks can be easily tuned by adjusting the carrier density of borophene, which can be realized by applying different external electric bias voltages. These results can provide theoretical guidance for the development of multi-peak near-IR dynamic integrated photonic devices
