论文标题
可扩展的边缘触点与2D材料
Scalable fabrication of edge contacts to 2D materials
论文作者
论文摘要
我们提出了一种基于三层抗性系统的2D材料的可靠和可重复形成的电触点的制造方法。我们证明了这种方法适用于外延石墨烯在碳化硅（Epigraphene）和过渡金属二北核化合物（TMDCS）二硫化物（$ MOS_2 $）上的适用性。对于ePigraphene，特定的接触电阻为$ρ_C$〜$ 50 $ $ωμm$，并遵循Landauer量子限制，$ρ_C\ propto n^{ - 1/2} $，$ n $是载体的载体密度。对于$ mos_2 $薄片，我们的边缘触点启用了野外效应晶体管（FET），其ON/OFF比为$> 10^6 $在室温下（$> 10^9 $在低温温度下）。这里展示的制造路线允许使用热蒸发以及溅射进行接触金属化，在设计电气接口时具有额外的灵活性，这在实用设备和探索新兴材料的电气特性时至关重要。
We present a fabrication method for reliably and reproducibly forming electrical contacts to 2D materials, based on the tri-layer resist system. We demonstrate the applicability of this method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal dichalcogenides (TMDCs) molybdenum disulfide ($MoS_2$). For epigraphene, the specific contact resistances are of the order of $ρ_c$ ~ $50$ $Ωμm$, and follow the Landauer quantum limit, $ρ_c \propto n^{-1/2}$, with $n$ being the carrier density of graphene. For $MoS_2$ flakes, our edge contacts enable field effect transistors (FET) with ON/OFF ratio of $> 10^6$ at room temperature ( $> 10^9$ at cryogenic temperatures). The fabrication route here demonstrated allows for contact metallization using thermal evaporation and also by sputtering, giving an additional flexibility when designing electrical interfaces, which is key in practical devices and when exploring the electrical properties of emerging materials.
