论文标题

通过与形状光场相互作用对自由电子的超快横向调制

Ultrafast Transverse Modulation of Free Electrons by Interaction with Shaped Optical Fields

论文作者

Madan, I., Leccese, V., Mazur, A., Barantani, F., La Grange, T., Sapozhnik, A., Gargiulo, S., Rotunno, E., Olaya, J. -C., Kaminer, I., Grillo, V., de Abajo, F. J. García, Carbone, F., Vanacore, G. M.

论文摘要

电子束的时空形状是电子显微镜中的大胆边界,它为空间分辨率增强,选择性探测,低剂量成像和更快的数据采集提供了新的途径。在过去的十年中,形状方法从被动相板演变为低速静电和磁静态显示。最近,通过超快电子显微镜的出现,较高的形状速度和灵活性变得可行,体现了迅速变化的范式,该范式依赖于使用光来控制自由电子。在这里,我们在实验上证明了电子束的任意横向调节,而无需设计和制造复杂的电子镜元素或材料纳米结构,而是诉诸于从平面薄膜中反射出的光束。我们通过非弹性相互作用与由外部空间光调制器(SLM)控制的形状超快光场对电子波袋进行任意横向调制。我们通过使用HG10和HG01对称性生成Hermite-Gaussian(HG)电子束来说明这种方法,并讨论它们在增强微观特征的成像对比度时的可能用途。相对于目前的方案,我们采用外部SLM的方法急剧扩大了可以印记在电子波函数上的模式范围,并使电子成型更容易执行。

Spatio-temporal shaping of electron beams is a bold frontier in electron microscopy, enabling new routes toward spatial-resolution enhancement, selective probing, low-dose imaging and faster data acquisition. Over the last decade, shaping methods evolved from passive phase plates to low-speed electrostatic and magnetostatic displays. Recently, higher shaping speed and flexibility have become feasible by the advent of ultrafast electron microscopy, embodying a swift change of paradigm that relies on using light to control free electrons. Here, we experimentally demonstrate that arbitrary transverse modulation of electron beams is possible without the need for designing and fabricating complicated electron-optics elements or material nanostructures, but rather resorting to shaping light beams reflected from a planar thin film. We demonstrate arbitrary transverse modulation of electron wavepackets via inelastic interaction with a shaped ultrafast light field controlled by an external spatial light modulator (SLM). We illustrate this method by generating Hermite-Gaussian (HG) electron beams with HG10 and HG01 symmetry and discuss their possible use in enhancing the imaging contrast of microscopic features. Relative to current schemes, our approach adopting an external SLM dramatically widens the range of patterns that can be imprinted on the electron wave function and makes electron shaping a much easier task to perform.

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