论文标题
凝胶终止对液滴外观上INGAAS量子点中INGAAS润湿层特性的影响
Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots
论文作者
论文摘要
基于III-V半导体的自组装量子点具有极好的量子光学应用特性。但是，在量子点的stranski-krastanov生长过程中形成的2D润湿层的存在可以限制其性能。在这里，我们通过替代的液滴外部截际技术在量子点生长过程中研究润湿层的形成。我们使用光致发光激发光谱，寿命测量和透射电子显微镜的组合，以确定这些液滴外观量子点中Ingaas润湿层的存在，即使没有可区分的润湿层光致发光。我们观察到，在INGAAS量子点的生长之前，增加沉积在GAA（100）表面上的GA量会导致润湿层的发射波长显着降低，以至于无法再将其与光致发光测量中的GAAS受体峰值发射区分开。
Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit their performance. Here, we investigate wetting layer formation during quantum dot growth by the alternative droplet epitaxy technique. We use a combination of photoluminescence excitation spectroscopy, lifetime measurements, and transmission electron microscopy to identify the presence of an InGaAs wetting layer in these droplet epitaxy quantum dots, even in the absence of distinguishable wetting layer photoluminescence. We observe that increasing the amount of Ga deposited on a GaAs (100) surface prior to the growth of InGaAs quantum dots leads to a significant reduction in the emission wavelength of the wetting layer to the point where it can no longer be distinguished from the GaAs acceptor peak emission in photoluminescence measurements.
